Lect. 5: PN Junction Diode (Razavi 2.2, 3.1)
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Measuring the I-V Characteristic of PN Junction Devices with the HF2LI | Zurich Instruments
PDF) Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
4H-SiC pn Diode Grown by LPE Method for High-Power Applications | Scientific.Net
New Method for Improving the Electrical Characteristics of P-N Junction Diode | Scientific.Net
Zener Diode Basic Operation and Applications
1200V Merged PIN Schottky Diode with Soft ... - 5S Components
1.5SMC56CA TR13 PBFREE Central Semiconductor Corp | Schaltungsschutz | DigiKey
Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence | Scientific.Net
PDF) Defect analysis in semiconductor materials based on pn junction diode characteristics | Jan Vanhellemont - Academia.edu
Bestimmung von Strom-Spannungs-Kennlinien mit dem Oszilloskop | Rohde & Schwarz
Diodes Incorporated Distributor | Distrelec Switzerland
P-N Diode Circuit
Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging | Scientific.Net
p-n Junction Diode: A Basic Non-linear Device | SpringerLink
Dioden | SpringerLink
Zener Diode Basic Operation and Applications
4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications | Scientific.Net
Bridge the Gap! Superluminescent LEDs. - EXALOS AG - High-Performance Light Sources. Made in Switzerland
2CERN, Geneva, Switzerland - ppt download
Superluminescent LEDs enter the Mainstream - EXALOS AG - High-Performance Light Sources. Made in Switzerland
007024247X | McGraw-Hill Photodiode Amplifiers: OP Amp Solutions | Distrelec Switzerland
Dioden | SpringerLink
PDF) Reliability of 4H-SiC p-n diodes on LPE grown layers
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness | Scientific.Net
Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS | Scientific.Net
Effect of X-Ray Irradiation on the Current of P-N Diode | Scientific.Net
Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process | Scientific.Net
